发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region. |
申请公布号 |
US2014357035(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414460081 |
申请日期 |
2014.08.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MAEDA Shigenobu;NOH Hyun-pil;LEE Choong-ho;HAM Seog-heon |
分类号 |
H01L21/8236;H01L29/66;H01L21/8234;H01L27/088 |
主分类号 |
H01L21/8236 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
preparing a semiconductor substrate comprising a high voltage region and a low voltage region in which a first active region and a second active region are defined by a first isolation layer and a second isolation layer, respectively; forming a first gate insulating layer on the first active region and on the second active region; forming a first source/drain region in the first active region; and after the first source/drain region is formed, forming a second source/drain region having a smaller thickness than a thickness of the first source/drain region in the second active region. |
地址 |
Suwon-si KR |