METHOD OF MAKING NANOSTRUCTURE

摘要

A method for making nanostructure is provided. The method includes following steps. A conductive layer including a graphene film is applied on an insulating substrate. A resist layer is placed on the conductive layer. A number of openings are formed by patterning the resist layer via electron beam lithography. A part of the conductive layer is exposed to form a first exposed portion through the plurality of openings. The first exposed portion of the conductive layer is removed to expose a part of the insulting substrate to form a second exposed portion. A preform layer is introduced on the second exposed portion of the insulating substrate. Remaining resist layer and remaining conductive layer are eliminated. A number of nanostructures are formed.

主权项

1. A method for making nanostructure comprising:
applying a conductive layer on an insulating substrate, wherein the conductive layer comprises a graphene film; placing a resist layer on the conductive layer; forming a plurality of openings by patterning the resist layer via electron beam lithography, wherein a part of the conductive layer is exposed through the plurality of openings to form a first exposed portion; removing the first exposed portion of the conductive layer to expose a part of the insulting substrate to form a second exposed portion; introducing a preform layer on the second exposed portion of the insulating substrate; and eliminating remaining resist layer and remaining conductive layer, and forming a plurality of nanostructures, wherein the remaining resist layer is a residual part of the resist layer after being patterned via electron beam lithography, the remaining conductive layer is a residual part of the conductive layer after removing the first exposed portion of the conductive layer, and each of the plurality of nanostructures is a protrusion.