| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure, capable of retaining memory contents for a storage retention period even under a no-supply state of electric power and having no limit on writing frequency.SOLUTION: The semiconductor device includes a first transistor 162 having: a first source electrode; drain electrodes 142a, 142b; a first channel formation region 144 that is electrically connected with the first source electrode and the drain electrodes 142a, 142b and uses oxide semiconductor material; a first gate insulation layer 146 on the first channel formation region; and a first gate electrode 148a on the first gate insulation layer, and a capacitative element 164. One of the first source electrode or the first drain electrode of the first transistor 162 is electrically connected with one of an electrode of the capacitative element 164.</p> |
