发明名称 |
eFUSE AND METHOD OF FABRICATION |
摘要 |
An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a reduced depth in areas outside of the fuse. The increased depth reduces the chance of the polysilicon line entering the fully silicided state. The cavity may be formed with a wet or dry etch. |
申请公布号 |
US2014357045(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201414464282 |
申请日期 |
2014.08.20 |
申请人 |
International Business Machines Corporation |
发明人 |
Maciejewski Edward P.;Slisher Dustin Kenneth;Zollner Stefan |
分类号 |
H01L23/525;H01L21/3205;H01L21/311;H01L21/3065 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |