发明名称 |
SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME |
摘要 |
Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible. |
申请公布号 |
US2014352606(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
US201214369159 |
申请日期 |
2012.10.31 |
申请人 |
SUMCO CORPORATION |
发明人 |
Sudo Toshiaki;Sato Tadahiro;Kitahara Eriko;Fujita Takeshi |
分类号 |
C30B15/10;C30B29/06;C30B15/20 |
主分类号 |
C30B15/10 |
代理机构 |
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代理人 |
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主权项 |
1. A vitreous silica crucible used to pull single-crystal silicon, comprising:
a cylindrical sidewall having an upward-opening rim; a mortar-shaped bottom including a curve; and a round portion connecting the sidewall and the bottom, wherein the round portion is provided in such a manner that a curvature of an inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through a rotation axis of the vitreous silica crucible. |
地址 |
Miato-ku, Tokyo JP |