发明名称 SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME
摘要 Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible.
申请公布号 US2014352606(A1) 申请公布日期 2014.12.04
申请号 US201214369159 申请日期 2012.10.31
申请人 SUMCO CORPORATION 发明人 Sudo Toshiaki;Sato Tadahiro;Kitahara Eriko;Fujita Takeshi
分类号 C30B15/10;C30B29/06;C30B15/20 主分类号 C30B15/10
代理机构 代理人
主权项 1. A vitreous silica crucible used to pull single-crystal silicon, comprising: a cylindrical sidewall having an upward-opening rim; a mortar-shaped bottom including a curve; and a round portion connecting the sidewall and the bottom, wherein the round portion is provided in such a manner that a curvature of an inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through a rotation axis of the vitreous silica crucible.
地址 Miato-ku, Tokyo JP