METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device capable of improving a manufacturing yield of a semiconductor module.SOLUTION: A method of manufacturing a silicon carbide semiconductor device includes the following steps of: preparing a silicon carbide substrate 20; forming a plurality of element parts 80 on the silicon carbide substrate 20; forming a first groove part 90 between the plurality of element parts 80; measuring a withstanding voltage of the element parts 80; and separating the plurality of element parts 80 from each other in the first groove part 90 after measuring the withstanding voltage of the element parts 80.