发明名称 NANO-PILLAR TRANSISTOR FABRICATION AND USE
摘要 A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.
申请公布号 US2014357974(A1) 申请公布日期 2014.12.04
申请号 US201414463392 申请日期 2014.08.19
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 RAJAGOPAL Aditya;SCHERER Axel;HENRY Michael D.;WALAVALKAR Sameer;TOMBRELLO Thomas A.;HOMYK Andrew P.
分类号 H01L29/423;A61B5/04;H01L29/49;H01L29/78;H01L29/41 主分类号 H01L29/423
代理机构 代理人
主权项
地址 PASADENA CA US