MAGNETIC MEMORY DEVICES

摘要

Magnetic memory devices include a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer. At least one of the free layer and the pinned layer includes a first vertical magnetic layer on the tunnel barrier layer and including boron (B), and a second vertical magnetic layer on the first vertical magnetic layer and having a lower B content than the first vertical magnetic layer. The first vertical magnetic layer is between the tunnel barrier layer and the second vertical magnetic layer, and a thickness of the second vertical magnetic layer is thinner than a thickness of the first vertical magnetic layer.

主权项

1. A magnetic memory device, comprising:
a magnetic tunnel junction including a free layer, a pinned layer, and a tunnel barrier layer between the free layer and the pinned layer, wherein at least one of the free layer and the pinned layer includes,
a first vertical magnetic layer on the tunnel barrier layer and including boron (B), anda second vertical magnetic layer on the first vertical magnetic layer and having a lower B content than the first vertical magnetic layer, wherein the first vertical magnetic layer is between the tunnel barrier layer and the second vertical magnetic layer, and a thickness of the second vertical magnetic layer is thinner than a thickness of the first vertical magnetic layer.