| 摘要 |
This thin film transistor device is provided with a substrate, a gate electrode, a source electrode, a drain electrode, a channel layer and a passivation layer. The channel layer is formed of an oxide semiconductor material, and the passivation layer has a multilayer structure that comprises a first layer, a second layer and a third layer from the substrate side. Among these layers, the first layer is formed of silicon oxide, silicon nitride or silicon oxynitride; the second layer is formed of a compound of aluminum; and the third layer is formed of silicon oxide, silicon nitride or silicon oxynitride. |
