发明名称 FREE-STANDING GALLIUM NITRIDE SUBSTRATE, LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING FREE-STANDING GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT
摘要 <p>Provided is a free-standing gallium nitride substrate which is formed of a plate that is configured from a plurality of gallium nitride-based single crystal grains having a single crystal structure generally in the normal direction. This free-standing gallium nitride substrate can be produced by a method which comprises: a step for preparing an oriented polycrystalline sintered body; a step for forming a seed crystal layer formed of gallium nitride on the oriented polycrystalline sintered body so that the seed crystal layer has a crystal orientation generally following the crystal orientation of the oriented polycrystalline sintered body; a step for forming a layer, which is configured from a gallium nitride-based crystal and has a thickness of 20μm or more, on the seed crystal layer so that the layer has a crystal orientation generally following the crystal orientation of the seed crystal layer; and a step for obtaining a free-standing gallium nitride substrate by removing the oriented polycrystalline sintered body. The present invention can provide a low-cost free-standing gallium nitride substrate that is suitable for area increase and is useful as an alternative material for a gallium nitride single crystal substrate.</p>
申请公布号 WO2014192911(A1) 申请公布日期 2014.12.04
申请号 WO2014JP64388 申请日期 2014.05.30
申请人 NGK INSULATORS, LTD. 发明人 WATANABE MORIMICHI;YOSHIKAWA JUN;NANATAKI TSUTOMU;IMAI KATSUHIRO;SUGIYAMA TOMOHIKO;YOSHINO TAKASHI;TAKEUCHI YUKIHISA;SATO KEI
分类号 H01L33/16;H01L33/32 主分类号 H01L33/16
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