发明名称 |
FREE-STANDING GALLIUM NITRIDE SUBSTRATE, LIGHT EMITTING ELEMENT, METHOD FOR PRODUCING FREE-STANDING GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT |
摘要 |
<p>Provided is a free-standing gallium nitride substrate which is formed of a plate that is configured from a plurality of gallium nitride-based single crystal grains having a single crystal structure generally in the normal direction. This free-standing gallium nitride substrate can be produced by a method which comprises: a step for preparing an oriented polycrystalline sintered body; a step for forming a seed crystal layer formed of gallium nitride on the oriented polycrystalline sintered body so that the seed crystal layer has a crystal orientation generally following the crystal orientation of the oriented polycrystalline sintered body; a step for forming a layer, which is configured from a gallium nitride-based crystal and has a thickness of 20μm or more, on the seed crystal layer so that the layer has a crystal orientation generally following the crystal orientation of the seed crystal layer; and a step for obtaining a free-standing gallium nitride substrate by removing the oriented polycrystalline sintered body. The present invention can provide a low-cost free-standing gallium nitride substrate that is suitable for area increase and is useful as an alternative material for a gallium nitride single crystal substrate.</p> |
申请公布号 |
WO2014192911(A1) |
申请公布日期 |
2014.12.04 |
申请号 |
WO2014JP64388 |
申请日期 |
2014.05.30 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
WATANABE MORIMICHI;YOSHIKAWA JUN;NANATAKI TSUTOMU;IMAI KATSUHIRO;SUGIYAMA TOMOHIKO;YOSHINO TAKASHI;TAKEUCHI YUKIHISA;SATO KEI |
分类号 |
H01L33/16;H01L33/32 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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