| 发明名称 |
ETCHING METHOD AND NON-TRANSITORY STORAGE MEDIUM |
| 摘要 |
Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed. |
| 申请公布号 |
US2014357085(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201414290036 |
申请日期 |
2014.05.29 |
| 申请人 |
TOKYO ELECTRON LIMITED ;L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE |
发明人 |
MORIYA Shuji;ANDO Atsushi;SONOBE Jun;TURPIN Christopher |
| 分类号 |
H01L21/306;H01L21/67 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, the method comprising:
loading the substrate to be processed into a chamber; and supplying an FNO gas and an F2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed. |
| 地址 |
Tokyo JP |
