| 发明名称 |
SEMICONDUCTOR DEVICE WITH AIR GAPS AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers. |
| 申请公布号 |
US2014357076(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201414454407 |
申请日期 |
2014.08.07 |
| 申请人 |
SK hynix Inc. |
发明人 |
JOUNG Yong-Soo;KIM Hyung-Kyun;KIM Jae-Soo;HWANG Dong-Gun;YOO Kyoung |
| 分类号 |
H01L21/768;H01L21/764 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, comprising:
forming a plurality of bit line structures over a substrate; forming contact holes between the bit line structures; forming sacrificial spacers on sidewalls of the contact holes; forming first plugs recessed inside the contact holes; forming air gaps by removing the sacrificial spacers; forming conductive capping layers capping the first plugs and the air gaps; and forming second plugs over the conductive capping layers. |
| 地址 |
Gyeonggi-do KR |
