AMORPHOUS SILICON THICKNESS UNIFORMITY IMPROVED BY PROCESS DILUTED WITH HYDROGEN AND ARGON GAS MIXTURE

摘要

The embodiments described herein generally relate to methods for forming an amorphous silicon structure that may be used in thin film transistor devices. In embodiments disclosed herein, the amorphous silicon layer is deposited using a silicon-based gas with an activation gas comprising a high concentration of inert gas and a low concentration of hydrogen-based gas. The activation gas combination allows for a good deposition profile of the amorphous silicon layer from the edge of the shadow frame which is translated to the polycrystalline silicon layer post-annealing.

主权项

1. A method comprising:
positioning a substrate in a processing region of a process chamber, the substrate having a surface with at least one exposed layer formed thereon; delivering a silicon-containing precursor and an activation gas to the processing region, the activation gas comprising an inert gas and a hydrogen-based gas; igniting the precursor and activation gas into a plasma; depositing an amorphous silicon layer on the substrate; dehydrogenating the amorphous silicon layer; and annealing the dehydrogenated amorphous silicon layer to form a polycrystalline silicon layer.