| 发明名称 |
METHOD OF MAKING A SEMICONDUCTOR DEVICE USING SPACERS FOR SOURCE/DRAIN CONFINEMENT |
| 摘要 |
A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement. |
| 申请公布号 |
US2014357040(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201313905586 |
申请日期 |
2013.05.30 |
| 申请人 |
STMICROELECTRONICS, INC. |
发明人 |
LOUBET Nicolas;Morin Pierre |
| 分类号 |
H01L29/66;H01L21/02 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device comprising:
forming a first spacer for at least one gate stack on a first semiconductor material layer; forming a respective second spacer for each of source and drain regions in the first semiconductor layer and adjacent the at least one gate, each second spacer comprising a pair of opposing sidewalls and an end wall coupled thereto; filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement. |
| 地址 |
Coppell TX US |
