METHOD TO OBTAIN SiC CLASS OF FILMS OF DESIRED COMPOSITION AND FILM PROPERTIES

摘要

Provided are methods and systems for providing silicon carbide class of films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon carbide films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon carbide film. The one or more radicals can be formed in a remote plasma source.

主权项

1. A method of depositing a silicon carbide film, the method comprising:
providing a substrate; flowing a first organo-silicon precursor onto the substrate; flowing a second organo-silicon precursor onto the substrate, wherein the first organo-silicon precursor is different from the second organo-silicon precursor, and wherein the first organo-silicon precursor and the second organo-silicon precursor are flowed together onto the substrate; and introducing from a source gas one or more radicals in a substantially low energy state to react with the first and the second organo-silicon precursors to deposit the silicon carbide film on the substrate.