METHOD FOR WRITING IN AN EEPROM-TYPE MEMORY INCLUDING A MEMORY CELL REFRESH

摘要

The present disclosure relates to a method for writing in an EEPROM memory, the method comprising steps of: storing the bits of a word to be written in first memory units, erasing a word to be modified, formed by first memory cells connected to a word line and first bit lines, reading bits stored in the memory cells of a word line WL, in a first read mode and storing the bits read in second memory units, reading in a second read mode the bits stored in the memory cells of the word line, and programming each memory cell of the word line connected to a memory unit storing a bit in the programmed state of the word to be written, of an erased word or of a word comprising a bit having different states in the first and second read modes.

主权项

1. A method, the method comprising:
receiving a write command indicating a datum to be written and a write address for writing in an EEPROM memory, storing in first memory units the datum to be written, selecting a first hardware word to be modified, formed by first memory cells belonging to a word line and a word column of the memory, corresponding to the write address, the word column including several first bit lines transversal to the word line and connected to the first memory cells, erasing the first memory cells forming the first hardware word, storing in second memory units bits read according to a first read mode from second memory cells of the word line, linked to second bit lines, distinct from the first bit lines, reading in a second read mode bits stored in the second memory cells, selecting at least one second hardware word that includes the second memory cells and stores at least one bit having different states in the first and second read modes, and programming each of the first memory cells corresponding to a programmed bit in the first memory unit and each of the second memory cells belonging to the at least one second hardware word and corresponding to a programmed bit in the second memory unit.