METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.

主权项

1. A semiconductor device, comprising:
a first substrate; a set of metal interconnections formed on a first surface of the first substrate; a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections; a buffer insulating layer formed on the filling insulating layer; a capping insulating layer formed on the buffer insulating layer; and a second substrate bonded to a surface of the capping insulating layer.