| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a substrate including a first active region and second active regions, a bit line structure in contact the first active region, and storage node contacts in contact the second active regions. A top surface of the first active region is lower than the top surfaces of the second active regions. |
| 申请公布号 |
US2014353744(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201314057923 |
申请日期 |
2013.10.18 |
| 申请人 |
SK hynix Inc. |
发明人 |
JUNG Ho-Jin;PARK Chang-Heon;CHOI Dong-Goo;YOO Joong-Gun;YOON Yeo-Jin;AHN Seong-Hwan;CHEONG Jin-Wook |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate comprising a first active region and second active regions; a bit line structure in contact with the first active region; and storage node contacts in contact with the second active regions, wherein a top surface of the first active region is lower than top surfaces of the second active regions. |
| 地址 |
Gyeonggi-do KR |
