SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate, a buffer layer of GaN containing at least one of Fe and C and disposed on the substrate, a channel layer of GaN disposed on the buffer layer and through which electrons travel, an electron supply layer disposed on the channel layer and producing a two-dimensional electron gas in the channel layer, a gate electrode, a drain electrode, and a source electrode. Recovery time of a drain current of the semiconductor device is no more than 5 seconds, where the recovery time is defined as the period of time after the semiconductor device is stopped from outputting high frequency power until the change in the drain current, after the stopping of the semiconductor device, reaches 95% of the change in the drain current occurring during the first 10 seconds after the stopping of the semiconductor device.

主权项

1. A semiconductor device comprising:
a substrate; a buffer layer of GaN containing at least one of Fe and C and disposed on said substrate; a channel layer of GaN disposed on said buffer layer and through which electrons travel; an electron supply layer disposed on said channel layer and producing a two-dimensional electron gas in said channel layer; a gate electrode disposed on said electron supply layer; a drain electrode disposed on said electron supply layer; and a source electrode disposed on said electron supply layer, wherein
recovery time of a drain current of said semiconductor device is no more than 5 seconds, andthe recovery time is defined as the period of time after said semiconductor device is stopped from outputting high frequency power until the change in the drain current, after the stopping of said semiconductor device, reaches 95% of the change in the drain current occurring during the first 10 seconds the stopping of said semiconductor device.