摘要 |
A light emitting device disclosed herein comprises a substrate, a buffer stack formed on the substrate, a tunneling junction stack formed on the buffer stack comprising an un-doped layer, a light-emitting stack formed on the tunneling junction stack, and a contact stack formed on the light emitting stack. The structure of the light emitting device disclosed also reduce the energy band bending arisen from the lattice mismatch and improve the epitaxy quality of the stacks. |