发明名称 DEFECT INSPECTING APPARATUS AND DEFECT INSPECTING METHOD
摘要 Disclosed is an apparatus for appropriately inspecting a defect on at least one of organic layers stacked on a substrate in an organic light emitting diode. The apparatus includes: an illumination unit configured to irradiate a near infrared light of a wavelength ranging from 0.7 μm to 2.5 μm toward the at least one of the organic layers on a glass substrate; an imaging unit configured to image the at least one of the organic layers irradiated with the near infrared light illuminated from the illumination unit; and a processing container configured to accommodate the illumination unit and the imaging unit therein and perform inspection of the at least one of the organic layers. An inside of the processing container is maintained in an atmosphere at an oxygen concentration lower than an oxygen concentration of air and at a dew point temperature lower than a dew point temperature of air.
申请公布号 US2014353505(A1) 申请公布日期 2014.12.04
申请号 US201414287460 申请日期 2014.05.27
申请人 Tokyo Electron Limited ;Seiko Epson Corporation 发明人 Sada Tetsuya;Nishiyama Jun;Konta Yu;Oshima Kiyomi;Saito Hiromi;Takei Shuichi
分类号 G01N21/88;G01N21/95 主分类号 G01N21/88
代理机构 代理人
主权项 1. An apparatus for inspecting a defect comprising: an illumination unit configured to irradiate a near infrared light toward at least one of organic layers stacked on a substrate in an organic light emitting diode; and an imaging unit configured to image the at least one of the organic layers irradiated with the near infrared light illuminated from the illumination unit, thereby inspecting the defect on the at least one of the organic layers.
地址 Tokyo JP