摘要 |
The present invention relates to a method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible (1) having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds (2) of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterised in that the layer in step (i) consists of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size. |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
PIHAN, ETIENNE;AMARAL DE OLIVEIRA, VANESSA;CAMEL, DENIS;CHAVRIER, DENIS;FORTIN, GAUTIER;JOUINI, ANIS;MARIE, BENOIT;PLASSAT, NELLY |