发明名称 多孔質絶縁膜及びその製造方法
摘要 PROBLEM TO BE SOLVED: To provide a porous insulating film in which the etching damage can be improved while maintaining the low dielectric constant and the mechanical strength of the insulating film, as it is, without requiring any complicated control, or the like, in the process, and to provide a method of producing the same. SOLUTION: The method of producing a porous insulating film includes (1) a step for forming a porous insulating film of a composition containing a compound having a siloxane structure, (2) a step for backfilling the porous part by coating the porous insulating film with a filler, and forming a polymer coated layer derived from the filler on the porous insulating film, and (3) a step for removing the polymer coated layer derived from the filler, and removing the filler in the vacancy thus backfilled. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5636277(B2) 申请公布日期 2014.12.03
申请号 JP20100290695 申请日期 2010.12.27
申请人 发明人
分类号 H01L21/312;C23C16/42;C23C16/56;H01L21/768;H01L23/532 主分类号 H01L21/312
代理机构 代理人
主权项
地址