| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the plating of high gloss can securely be formed only in a necessary part while manufacturing is made efficient by using a resist layer of a material which does not dissolve in a fluid plating liquid by which the plating of high gloss can be obtained and finally making the resist layer as a part of a device exterior without removing the layer after plating, and to provide manufacturing methods of the semiconductor device and a substrate for the semiconductor device. SOLUTION: Since the resist layer 12 formed in a non-arranging part of a metal part 11 prior to the formation of the metal part 11 in the semiconductor device 1 where the metal part 11 is exposed at a bottom has resistance to the plating liquid used in plating of a surface metal layer 13 to a surface of the metal part 11, plating on a part except for a necessary part is securely prevented without deteriorating the resist layer 12 against the plating liquid, the surface metal layer 13 of the high gloss can appropriately be formed only in the necessary part such as the surface of the meal part 11, and the surface metal layer 13 can be used as a reflection part of light. Thus, an application range as the semiconductor device can be expanded. COPYRIGHT: (C)2011,JPO&INPIT |
