| 摘要 |
A lateral field effect transistor device has a plurality of source cells and a plurality of drain cells. Each source cell has a central semiconductor source region, and each drain cell has a central semiconductor drain region. The device further has a first metallic conductive path which extends from a source electrode to join the source regions of the source cells, thereby connecting the source cells in series to the source electrode. The device further has a second metallic conductive path which extends from a drain electrode to join the drain regions of the drain cells, thereby connecting the drain cells in series to the drain electrode. The device further has a gate path which extends from a gate electrode around the edges of the cells to form boundaries between neighbouring source and drain cells, thereby forming respective field effect transistors between the source and drain regions of neighbouring cells. The source cells and drain cells tessellate to cover an area of the device. |
