| 摘要 |
providing a wafer (1) of a first conductivity type, which wafer has a first main side (11) and a second main side (15) opposite to the first main side (11 ), • - applying on the second main side (15) at least one of a dopant of the first conductivity type for forming a layer (2) of the first conductivity type and a dopant of a second conductivity type for forming a layer (2) of the second conductivity type, • - afterwards depositing a Titanium layer (3) on the second main side (15), • - laser annealing the Titanium deposition layer (3) so that simultaneously an intermetal compound layer (35) is formed at the interface between the Titanium deposition layer (3) and the wafer (1) and the dopant is diffused into the wafer (1), • - creating a first metal electrode layer (4) on the second side (15). |
