发明名称 ナノシートトランスデューサ
摘要 PROBLEM TO BE SOLVED: To improve sensitivity while suppressing manufacturing costs of a capacitance type transducer. SOLUTION: The nanosheet transducer includes a die including a substrate layer (101), an insulating layer (102) laminated on the substrate layer, and a silicon layer (103) laminated on the insulating layer. A support 11a, a sheet-like flexible layer 11b with at least one side joined to the support and having a thickness vertical to a principal plane of the substrate layer that is smaller than 1μm, and fixed electrodes 10a, 10b having side faces facing the flexible electrode in a direction in parallel with the principal plane of the substrate layer and vertical to the principal plane are formed of the silicon layer. The support and the fixed electrodes are joined to the substrate layer by the insulating layer, and a gap (G) corresponding to the insulating layer is formed between the flexible electrode and the substrate layer. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5635370(B2) 申请公布日期 2014.12.03
申请号 JP20100248029 申请日期 2010.11.05
申请人 发明人
分类号 B81B3/00;B81C1/00;G01L9/00;G01P15/125 主分类号 B81B3/00
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