Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device

摘要

Methods are generally provided for forming a conductive oxide layer (14) on a substrate (12). In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (14) on a substrate (12) at a sputtering temperature from about 50° C to about 250° C, and annealing the transparent conductive oxide layer (14) at an anneal temperature of about 450° C to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device (10).