发明名称 |
Method for contacting a semiconductor element by welding a contact element to a sintered layer on the semiconductor element and semiconductor component with increased stability against thermomechanical influence |
摘要 |
The method involves applying a sintering material in a connecting region between a top surface of a semi-conductor material (1) and a contact element (7). The pressure-free sintering is performed to form a sintered weldable layer (2) on the top surface of the semiconductor material. The formed sintered weldable layer is loaded with the contact element. A pressure-free formation of a material bond is carried out by a laser welding, and an electrical contact between the top surface of the semiconductor material and the contact element is possible. An independent claim is included for a semiconductor device. |
申请公布号 |
EP2743973(A3) |
申请公布日期 |
2014.12.03 |
申请号 |
EP20130193456 |
申请日期 |
2013.11.19 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
GUENTHER, MICHAEL |
分类号 |
H01L21/60;H01L23/488;H01L23/49 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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