Vertical gallium nitride transistors and methods of fabricating the same

摘要

Vertical gallium nitride field-effect transistors and corresponding manufacturing methods are provided. A transistor includes a semiconductor structure (20) including a first semiconductor layer (25) of a first conductivity type having a bottom surface and sidewalls, a second semiconductor layer (29) of the first conductivity type surrounding the bottom surface and the sidewalls of the first semiconductor layer, and a semiconductor layer (27) of a second conductivity type disposed between the first semiconductor layer and the second semiconductor layer to separate the first and second semiconductor layers from each other. Current blocking layers (31, 115, 135) may be provided. Other transistors include a heterojunction to provide a two dimensional electron gas (2DEG).