| 摘要 |
Disclosed is a method of manufacturing a semiconductor light-emitting element, wherein defects in a light-emitting layer or a p-type semiconductor layer caused by the surface of a regrowth layer do not tend to be generated, and wherein a semiconductor light-emitting element with high output can be attained. Such a method of manufacturing a semiconductor light-emitting element is provided with: a first process for laminating a first n-type semiconductor layer (12c) on a substrate (11), in a first metal organic chemical vapor deposition apparatus; and a second process for laminating, in succession, a regrowth layer (12d), a second n-type semiconductor layer (12b), a light-emitting layer (13), and a p-type semiconductor layer (14) on the first n-type semiconductor layer (12c), in a second metal organic chemical vapor deposition apparatus. In the process of laminating the regrowth layer (12d), a process (1) for making the growth condition of the regrowth layer (12d) to be the same as when forming the first n-type semiconductor layer (12c), a process (2) for supplying as a dopant an amount of Si that is less than when forming the first n-type semiconductor layer (12c), and a process (3) for supplying a large amount of Si as a dopant are carried out in this order. |
