发明名称 |
NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT EMISSION |
摘要 |
<p>A light-emitting diode is provided, including an active semiconductor area for the radiative recombination of electron-hole pairs having a plurality of nanowires, each made of an unintentionally doped semiconductor material, a first semiconductor area for radially injecting holes into each nanowire, the first semiconductor area being made of a doped semiconductor material having a first conductivity type and having a bandgap that is greater than the bandgap of the semiconductor material of the nanowires, and a second semiconductor area for axially injecting electrons into each nanowire, the second semiconductor area being made of a doped semiconductor material having a second conductivity type that is opposite to that of the first conductivity type.</p> |
申请公布号 |
EP2617069(B1) |
申请公布日期 |
2014.12.03 |
申请号 |
EP20110773065 |
申请日期 |
2011.09.12 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
GILET, PHILIPPE;BAVENCOVE, ANNE-LAURE |
分类号 |
H01L33/06;B82Y20/00;H01L33/08 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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