发明名称 |
METHOD FOR THE SEPARATION OF A SEMICONDUCTOR LAYER BY LASER PULSES |
摘要 |
<p>A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.</p> |
申请公布号 |
EP1588414(B1) |
申请公布日期 |
2014.12.03 |
申请号 |
EP20040705373 |
申请日期 |
2004.01.27 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
KAISER, STEPHAN;HÄRLE, VOLKER;HAHN, BERTHOLD |
分类号 |
H01L21/58;H01L21/268;H01L21/78;H01L33/00 |
主分类号 |
H01L21/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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