| 摘要 |
<p>The present invention relates to an epitaxial wafer. The epitaxial wafer includes a substrate, and an epitaxial structure which includes a buffer layer formed on the substrate and an active layer formed on the buffer layer. The buffer layer is formed on the substrate and includes a first region which maintains a preset doping concentration and a second region which is formed on the first region and gradually decreases a doping concentration toward the active layer.</p> |
