Semiconductor device

摘要

A semiconductor device including a semiconductor layer of a first conductivity type; a plurality of body regions of a second conductivity type; source regions of the first conductivity type, formed on a surface layer part of each body region and spaced away from the edges of each body region; a gate insulating film formed on the semiconductor layer; and gate electrodes formed on the gate insulating film. In the semiconductor layer, trenches extending between two neighboring source regions are formed, the inside surface of the trenches are covered by a gate insulating film, and the gate electrodes comprise surface-facing parts, which are buried in the trenches.

主权项

1. A semiconductor device comprising:
an N-type semiconductor layer made of SiC; a P-type region selectively formed on a surface layer portion of the N-type semiconductor layer; an N-type region formed on a surface layer portion of the P-type region at an interval from a peripheral edge of the P-type region; a gate insulating film formed on the N-type semiconductor layer; and a gate electrode formed on the gate insulating film and opposed to a portion between the peripheral edge of the P-type region and the N-type region, wherein a P-type impurity concentration in a portion of the P-type region having a depth of not more than 100 nm with reference to a center of the gate insulating film in a thickness direction is not more than 1×1018 cm−3, and the gate electrode is made of polysilicon doped with a P-type impurity.