Coalesced nanowire structures with interstitial voids and method for manufacturing the same

摘要

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.

主权项

1. A semiconductor device, comprising:
a plurality of first conductivity type semiconductor nanowire cores located over a support; a continuous second conductivity type semiconductor layer extending over and around the cores; a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores; and a first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids; an active region shell around each nanowire core, wherein the active region shell comprises at least one quantum well and the second conductivity type semiconductor layer surrounds the at least one quantum well to form a light emitting p-i-n junction at each nanowire core surrounded by the at least one quantum well shell; and wherein a portion of a space between adjacent active region shells is completely filled with the continuous second conductivity type semiconductor layer.