Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light

摘要

After flash irradiation on a semiconductor wafer is started and then the temperatures of front and back surfaces of the semiconductor wafer become equal to each other, the temperature of the back surface of the semiconductor wafer, which has a known emissivity, is measured with a radiation thermometer. The emissivity of the front surface of the semiconductor wafer is calculated based on the intensity of radiated light from a black body having an equal temperature to the temperature of the back surface thereof, and the intensity of radiated light actually radiated from the front surface of the semiconductor wafer. Then, the temperature of the front surface of the semiconductor wafer heated by the flash irradiation is calculated based on the calculated emissivity and the intensity of the radiated light from the front surface of the semiconductor wafer that has been measured after the flash irradiation is started.

主权项

1. A heat treatment apparatus for heating a substrate by irradiating a front surface of the substrate with light, the substrate including a known emissivity on a back surface thereof, the heat treatment apparatus comprising:
a chamber for receiving a substrate therein; a holder for holding the substrate within said chamber; an irradiation part for irradiating the front surface of the substrate held by said holder with light; a quartz window provided in said chamber, for eliminating light having a predetermined wavelength range from light emitted from said irradiation part; a photodetector element provided on the front surface side of said substrate, for receiving radiated light radiated from said front surface; a filter for selectively allowing light having a selective wavelength range included in radiated light directed from the front surface of said substrate toward said photodetector element to pass therethrough, said selective wavelength range being included in said predetermined wavelength range; a back-surface temperature measuring part provided on the back surface side of said substrate, for measuring a temperature of said back surface; a radiated light intensity measuring part for measuring an intensity of the radiated light received by said photodetector element; an emissivity calculating part calculating an emissivity of the front surface of said substrate after irradiation by said irradiation part is started and then the temperatures of the front and back surfaces of said substrate become equal to each other, based on the temperature of the back surface of said substrate measured by said back-surface temperature measuring part and the intensity of the radiated light from the front surface of said substrate measured by said radiated light intensity measuring part; and a front-surface temperature calculating part for calculating the temperature of the front surface of said substrate heated by said irradiation, based on the emissivity of the front surface of said substrate calculated by said emissivity calculating part and the intensity of the radiated light from the front surface of said substrate measured by said radiated light intensity measuring part after said irradiation is started and before the temperature of the front surface of said substrate and the back surface thereof become equal to each other.