Semiconductor device and method of forming topside and bottom-side interconnect structures around core die with TSV

摘要

A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV.

主权项

1. A method of making a semiconductor device, comprising:
providing a first carrier; forming a first conductive layer over the first carrier; mounting a first side of a core semiconductor device including a through silicon via (TSV) to the first carrier, the TSV being electrically connected to the first conductive layer; forming an insulating layer around the core semiconductor device; providing a second carrier; forming a second conductive layer over the second carrier; mounting the second carrier to a second side of the core semiconductor device opposite the first side of the core semiconductor device; removing the first carrier and second carrier; forming a first interconnect structure over the first side of the core semiconductor device, the first interconnect structure being electrically connected to the TSV; forming a second interconnect structure over the second side of the core semiconductor device opposite the first side of the core semiconductor device, the second interconnect structure being electrically connected to the TSV; mounting a semiconductor die to the first interconnect structure; and forming a plurality of bumps over the second interconnect structure.