| 发明名称 | Memory device, operation method thereof, and memory system having the same | ||
| 摘要 | A method of repairing a word line of a memory device includes receiving a row address, comparing a received row address with a row address of a defective cell, enabling a normal word line and a redundant word line, which correspond to the row address, according to a result of the row address comparison, receiving a column address, comparing a received column address with a column address of the defective cell, and performing a memory access operation on one of the normal word line and the redundant word line according to a result of the column address comparison. | ||
| 申请公布号 | US8902686(B2) | 申请公布日期 | 2014.12.02 |
| 申请号 | US201313833195 | 申请日期 | 2013.03.15 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Jeong In Chul;Kim Ki Heung |
| 分类号 | G11C7/00;G11C29/04;G11C29/00 | 主分类号 | G11C7/00 |
| 代理机构 | Muir Patent Consulting, PLLC | 代理人 | Muir Patent Consulting, PLLC |
| 主权项 | 1. A method of repairing a word line of a memory device, comprising: receiving a row address and comparing the received row address with a row address of a defective cell; enabling a normal word line and a redundant word line, which correspond to the row address, according to a result of the row address comparison; receiving a column address and comparing the received column address with a column address of the defective cell; and performing a memory access operation on one of the normal word line and the redundant word line according to a result of the column address comparison. | ||
| 地址 | Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do KR | ||