Manufacture method of sensor

摘要

An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer.

主权项

1. A manufacture method of a sensor comprising a plurality of pixel units arranged in an array, each of which comprises a switch device and a photoelectric sensing device, the method comprising:
preparing at least two gate scanning lines and gate electrodes of the switch device of a row of pixel units connected to each of the gate scanning lines on a substrate; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film on the substrate and the gate scanning lines; performing a same photolithography process on a lamination structure of the active layer thin film, the ohmic contact layer thin film, the first conducting layer thin film and the photoelectric conversion layer thin film by using a gray-tone mask to obtain at least two data lines intersecting the gate scanning lines, the photoelectric sensing devices and the switch devices, each of the data lines is connected to drain electrodes of the switch devices of a column of pixel units in the sensor, and source electrodes of the switch device are connected to negative electrodes of the photoelectric sensing devices; preparing a first passivation layer covering the photoelectric sensing devices and the switch devices, and preparing via holes on the first passivation layer, which are located at predetermined positions in regions of the photoelectric sensing devices; preparing bias lines on the first passivation layer at positions corresponding to the data lines and the switch devices, the bias lines being electrically connected to the photoelectric sensing devices through the via holes; and preparing a second passivation layer covering the bias lines and the first passivation layer.