| 发明名称 | Method for etching polysilicon gate | ||
| 摘要 | A method for etching a polysilicon gate is disclosed, wherein the polysilicon gate includes an undoped polysilicon portion and a doped polysilicon portion that is situated on the undoped polysilicon portion. The method includes: obtaining a thickness of the undoped polysilicon portion and a thickness of the doped polysilicon portion by using an optical linewidth measurement device; and etching the undoped polysilicon portion and the doped polysilicon portion by using two respective steps with different parameters, respective etching time for the undoped polysilicon portion and the doped polysilicon portion of every wafer being adjusted in real time by using an advanced process control system. This method enables the doped and undoped polysilicon portions of each polysilicon gate on every wafer to have substantially consistent profiles between each other. | ||
| 申请公布号 | US8900887(B2) | 申请公布日期 | 2014.12.02 |
| 申请号 | US201213730532 | 申请日期 | 2012.12.28 |
| 申请人 | Shanghai Huali Microelectronics Corporation | 发明人 | Tang Zaifeng;Fang Chao;Lv Yukun;Chang HsuSheng |
| 分类号 | H01L21/00;H01L21/66 | 主分类号 | H01L21/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A method for etching a polysilicon gate, the polysilicon gate comprising an undoped polysilicon portion and a doped polysilicon portion, the doped polysilicon portion being situated on the undoped polysilicon portion, the method comprising: obtaining a thickness of the undoped polysilicon portion and a thickness of the doped polysilicon portion by using an optical linewidth measurement device; and etching the undoped polysilicon portion and the doped polysilicon portion by using two respective steps with different parameters, respective etching time for the undoped polysilicon portion and the doped polysilicon portion of every wafer being adjusted in real time by using an advanced process control system, wherein obtaining a thickness of the undoped polysilicon portion and a thickness of the doped polysilicon portion includes: measuring a total thickness of the polysilicon gate and a thickness of the doped polysilicon portion in a step of measuring a linewidth of the polysilicon gate by using an optical linewidth measurement device; and obtaining a thickness of the undoped polysilicon portion by subtracting the thickness of the doped polysilicon portion from the total thickness of the polysilicon gate. | ||
| 地址 | Shanghai CN | ||