Plasma processing method and apparatus

摘要

Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

主权项

1. A plasma processing apparatus comprising:
a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining plural substrates in turn within said plasma processing chamber; a gas feeder for feeding processing gas into said processing chamber; a vacuum pump for evacuating gas from said processing chamber via a vacuum valve; an RF power supply for supplying RF power to said antenna electrode via a matching network; a solenoid coil for forming a magnetic field within said processing chamber; a sensor for monitoring an internal pressure of said processing chamber; a database unit configured to store criterion values for determining an end of seasoning that is to be performed after wet cleaning; a computing unit configured to compare data collected by a collection unit with the criterion values stored in the database unit, wherein said computing unit is also configured to determine said end of seasoning when a plurality of conditions, of the following conditions, are satisfied: (1) a derivative of an emission intensity ratio (C2/H) between carbon (C2) and hydrogen (H) in a plasma has decreased to a steady value that is used to determine said end of seasoning; (2) a peak-to-peak voltage of a RF bias to be fed to the lower electrode has risen with plasma processing time to a steady value that is used to determine said end of seasoning; (3) an opening of said vacuum valve at a time of plasma processing has decreased with plasma processing time to a steady value that is used to determine said end of seasoning; (4) a time required to have said internal pressure of said processing chamber reduced to a predetermined vacuum pressure after completion of plasma discharge has decreased with plasma processing time to a preset criterion value that is used to determine said end of seasoning; (5) an electrostatic capacitance at a time of matching by a capacitor, which is a component of said matching network, has increased with plasma processing time to a steady value that is used to determine said end of seasoning; and (6) a time required until ignition of said plasma from feeding of said RF power to said antenna electrode via said matching network has decreased with plasma processing time to a steady value that is used to determine said end of seasoning; and a control unit for controlling an etching apparatus based on an output signal from the computing unit.