NONVOLATILE MEMORY DEVICE AND DATA PROCESSING METHOD THEREOF

摘要

The present invention relates to a nonvolatile memory device and, more particularly, to a nonvolatile memory device like a resistive random access memory device and a data processing method thereof. The nonvolatile memory device according to the present invention includes a memory cell array which includes a first memory cell and a second memory cell and an access control circuit which performs a data processing operation for the second memory cell when a reprogram operation for the first memory cell is performed after data stored in the first memory cell are read. The reprogram operation for the first memory cell is selectively performed in response to the change state of the first memory cell when the data stored in the first memory cell are read. The nonvolatile memory device and the data processing method thereof according to the present invention perform the data processing operation with high reliability at a high operation speed by performing the reprogram operation for the memory cell whose state is changed in a reading operation without additional time consumption.