SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing a semiconductor device may include: forming a material layer on a substrate; forming a capping oxide layer on the first surface of the material layer by performing a selective oxidation process and preventing the oxidation of the second surface of the material layer; and forming a material pattern by etching the material layer through the second surface of the material layer. When the material is etched, the etch rate of the capping oxide layer is smaller than that of the material layer.