Method of testing a semiconductor memory device

摘要

A method of testing a semiconductor memory device includes writing first data to a memory cell array in the semiconductor memory device, loading second data from the memory cell array onto a plurality of data pads of the semiconductor memory device, rewriting the second data to the memory cell array, and outputting test result data through one or more test pads. The first data is received from an external device through the one or more test pads, which correspond to one or more of the plurality of data pads. The test result data is based on the rewritten data in the memory cell array.

主权项

1. A method of testing a semiconductor memory device, comprising:
writing first data to a memory cell array in the semiconductor memory device, wherein the first data is received from an external device through one or more test pads, and the one or more test pads correspond to one or more of a plurality of data pads of the semiconductor memory device; loading second data from the memory cell array onto the plurality of data pads; rewriting the second data on the plurality of data pads to the memory cell array; and outputting test result data through the test pads based on the rewritten data in the memory cell array, wherein at least a portion of a write path of the semiconductor memory device is enabled while at least a portion of a read path of the semiconductor memory device is enabled in response to an activation timing of a write command signal.