发明名称 |
Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers |
摘要 |
Provided are methods and apparatus for determining the crystal fraction of a casted-mono silicon wafer. A light source is directed at the wafer and the transmission or reflection is measured by a detector. An image of the wafer is generated by a processor and the crystal fraction is calculated from the generated image. The crystal fraction is correlated to the efficiency of the solar cell produced, allowing for the rejection of inferior wafers prior to processing. |
申请公布号 |
US8902428(B2) |
申请公布日期 |
2014.12.02 |
申请号 |
US201213421194 |
申请日期 |
2012.03.15 |
申请人 |
Applied Materials, Inc. |
发明人 |
Schlezinger Asaf;Al-Bayati Amir |
分类号 |
G01N21/55 |
主分类号 |
G01N21/55 |
代理机构 |
Servilla Whitney LLC |
代理人 |
Servilla Whitney LLC |
主权项 |
1. A method of determining a crystal fraction of a casted-mono silicon wafer, the method comprising:
passing light through the casted-mono silicon wafer; detecting the light that has passed through the casted-mono silicon wafer; creating an image of the casted-mono silicon wafer from the detected light; and determining the crystal fraction of the casted-mono silicon wafer from the image by determining the largest area of the wafer that is mono-crystalline. |
地址 |
Santa Clara CA US |