发明名称 Ion manipulation device with electrical breakdown protection
摘要 An ion manipulation method and device is disclosed. The device includes a pair of substantially parallel surfaces. An array of inner electrodes is contained within, and extends substantially along the length of, each parallel surface. The device includes a first outer array of electrodes and a second outer array of electrodes. Each outer array of electrodes is positioned on either side of the inner electrodes, and is contained within and extends substantially along the length of each parallel surface. A DC voltage is applied to the first and second outer array of electrodes. A RF voltage, with a superimposed electric field, is applied to the inner electrodes by applying the DC voltages to each electrode. Ions either move between the parallel surfaces within an ion confinement area or along paths in the direction of the electric field, or can be trapped in the ion confinement area. The surfaces are housed in a chamber, and at least one electrically insulative shield is coupled to an inner surface of the chamber for increasing a mean-free-path between two adjacent electrodes in the chamber.
申请公布号 US8901490(B1) 申请公布日期 2014.12.02
申请号 US201414292448 申请日期 2014.05.30
申请人 Battelle Memorial Institute 发明人 Chen Tsung-Chi;Tang Keqi;Ibrahim Yehia M.;Smith Richard D.;Anderson Gordon A.;Baker Erin M.
分类号 H01J49/42 主分类号 H01J49/42
代理机构 代理人 Gokcek A. J.
主权项 1. An ion manipulation device with electrical breakdown protection comprising: a. a pair of surfaces including an ion inlet and an ion outlet; b. arrays of electrodes coupled to the surfaces to which RF potentials are applied to at least one of the surfaces in order to create a pseudopotential that inhibits charged particles from approaching the surfaces; and c. simultaneous application of DC potentials to control and restrict movement of ions in between each pair of surfaces, wherein the surfaces are housed in a chamber; and d. at least one electrically insulative shield coupled to an inner surface of the chamber for increasing a mean-free-path between two adjacent electrodes in the chamber.
地址 Richland WA US