发明名称 Liquid crystal display device
摘要 An LCD device includes dual gate transistors provided to an output portion of the shift register for outputting a gate voltage. As such, the charge/discharge time of the output portion is reduced so the response time of liquid crystal is improved.
申请公布号 US8902210(B2) 申请公布日期 2014.12.02
申请号 US201012852683 申请日期 2010.08.09
申请人 LG Display Co., Ltd. 发明人 Moon Kyo Ho;Lee Chul Gu;Choi Hoon;Cho Yong Soo;Han Sang Kug
分类号 G06F3/038;G09G5/00;G09G3/36 主分类号 G06F3/038
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A liquid crystal display device, comprising: a display panel configured to display an image and comprising a plurality of gate lines and a plurality of data lines arranged thereon; a data driver configured to supply the data lines of the display panel with data signals corresponding to the image; and a gate driver formed on the display panel and comprising a plurality of shift registers configured to sequentially shift a start pulse to be applied to the gate lines, each of the shift registers comprising: an output portion comprising first and second dual gate transistors, wherein: the first dual gate transistor comprises: first and second gate electrodes configured to be responsive to a voltage on a first node;a drain electrode configured to receive a clock signal; anda source electrode connected to the respective gate line and configured to selectively apply the clock signal on the drain electrode to the respective gate line according to the voltage on the first node, andthe second dual gate transistor comprises: first and second gate electrodes configured to be responsive to a voltage on a second node;a source electrode configured to receive a first source voltage; anda drain electrode connected to the respective gate line and configured to selectively apply the first source voltage to the respective gate line according to the voltage on the second node; and a control portion configured to control the voltages on the first and second nodes, wherein each of the first and second dual gate transistors comprises: the first gate electrode formed on a substrate,a gate insulating film formed on the substrate with the first gate electrode,a semiconductor layer formed, opposite the first gate electrode, on the substrate with the gate insulating film, the source and drain electrodes being separate from each other on the semiconductor layer,a passivation layer formed on the source and drain electrodes and comprising a contact hole,the second gate electrode formed, opposite the semiconductor layer, on the passivation layer and electrically connected to the first gate electrode through a contact hole on the passivation layer, anda connection electrode extending from an end of the second gate electrode, comprising the same material as a material of at least one of the first and second gate electrodes, and electrically connected to an end of a top surface of the first gate electrode through the contact hole of the passivation layer, and wherein the connection electrode and the second gate electrode are a single body.
地址 Seoul KR