Method for forming narrow structures in a semiconductor device

摘要

A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.

主权项

1. A method comprising:
forming spacers over a layer of a semiconductor device,
forming the spacers including:
etching a material, of the semiconductor device, to form the spacers; etching the layer to remove portions of the layer not covered by the spacers to form a plurality of structures of the semiconductor device,
a remaining portion of the layer comprising the plurality of structures,a width of the spacers being approximately equal to a width of the plurality of structures; and forming a memory device between two adjacent structures of the plurality of structures after forming the plurality of structures,
forming the memory device, after forming the plurality of structures, including:
forming an oxide layer,forming a control gate, andforming a charge storage layer that is configured to store at least two distinct charges.