Method of fabricating high efficiency CIGS solar cells

摘要

A method is disclosed for fabricating high efficiency CIGS solar cells including the deposition of a multi-component metal precursor film on a substrate. The substrate is then inserted into a system suitable for exposing the precursor to a chalcogen to form a chalcogenide TFPV absorber. One or more Na precursors are used to deposit a Na-containing layer on the precursor film in the system. This method eliminates the use of dedicated equipment and processes for introducing Na to the TFPV absorber.

主权项

1. A method for forming a chalcogenide on a substrate, the method comprising:
forming a metal film on the substrate; forming a layer comprising one of Na, K, or Ca directly on the metal film; heating the substrate with the metal film and the layer to a first temperature while maintaining a pressure in a processing chamber at a first level of between about 760 Torr and 1520 Torr, while maintaining the substrate with the metal film and the layer at the first temperature, reducing the pressure in the processing chamber to a second level to between about 600 Torr and 700 Torr; and while maintaining the substrate with the metal film and the layer at the first temperature in the processing chamber having the pressure at the second level, flowing a chalcogen precursor into the processing chamber.